tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company features ? fast s witching ? 100 % avalanche tested ? i mproved dv / dt capability applications ? switch mode power supply (smps) ? uninterruptible power supply (ups) ? power factor correction (pfc) device marking and package information device package marking tma 4n 65 h to -220 f a4n 65 h tmu 4n 65 h to -251 u4n 65 h tmp 4n 65 h to -220 p4n 65 h tmd 4n 65h to -252 d4n 65h absolute maximum ratings t c = 25 oc, unless otherwise noted parameter symbol value unit to -220f to -220 to -251 to -252 drain - source voltage (v gs = 0v) v dss 650 v cont inuous drain cu rrent i d 4 a pulsed drain current (note1) i dm 16 a gate - source voltage v gss 30 v single pulse avalanche energy ( note2) e as 160 mj avalanche current (note1) i ar 4 a repetitive avalanche energy (note1) e ar 20 mj power dissipation (t c = 25oc ) p d 36 75 w operating junction and storage temperature range t j , t stg - 55~+150 oc thermal resistance parameter symbol value unit to -220f to -220 to -251 to -252 thermal resistance, junction -to - case r thjc 3.47 1.67 k/w thermal resistance, junction -to - ambient r thja 62.5 60 650v n - channel mosfet 1 a l l d a t a s h e e t . c o m
tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company specifications t j = 25oc , unless otherwise noted parameter symbol test conditions value unit min. typ. max. static drain -source breakdown voltage v (br)dss v gs = 0v, i d = 250a 650 -- -- v zero gate voltage drain current i dss v ds = 650v , v gs = 0v, t j = 25oc -- -- 1 a gate -source leakage i gss v gs = 30v -- -- 100 na gate -source threshold voltage v gs(th) v ds = v gs , i d = 250a 3 .0 -- 4.0 v drain -source on - resistance (note 3) r ds(on) v gs = 10v, i d = 2.0a -- 2 2.4 ? dynamic input capacitance c iss v gs = 0v, v ds = 25v, f = 1.0mhz -- 580 -- pf output capacitance c oss -- 69.5 -- reverse transfer capacitance c rss -- 10.9 -- total gate charge q g v dd = 520v , i d = 4.0a, v gs = 10v -- 15 -- nc gate -source charge q gs -- 2.5 -- gate - drain charge q gd -- 7.5 -- turn -on delay time t d(on) v dd = 400v , i d =4.0a, r g = 25 ? -- 12 -- ns turn -on rise time t r -- 22 -- turn - off delay time t d(off) -- 50 -- turn - off fall time t f -- 48 -- drain - source body diode characteristics continuous body diode current i s t c = 25 oc -- -- 4 a pulsed diode forward current i sm -- -- 16 body diode voltage v sd t j = 25oc, i sd = 4.0a, v gs = 0v -- -- 1.4 v reverse recovery time t rr v gs = 0v,i s = 4.0a, di f / dt =100a / s -- 250 -- ns r everse recovery charge q rr -- 3.5 -- c notes 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 4a, v dd = 50v, r g = 25 ?, starting t j = 25 oc 3. pulse test: pulse width 300 s, duty cycle 1% 2 a l l d a t a s h e e t . c o m
tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company 0.2 0.4 0.6 0.8 1 1.2 t j = 25 o c t j = 150 o c t j = -55o c 3 typical characteristics t j = 25 o c, unless otherwise noted 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 -50 0 50 100 150 v gs = 10v i d =4a figure 3. drain current vs. temperature figure 4. power dissipation vs. temperature figure 1. output characteristics (t j = 25oc) figure 2. body diode forward voltage figure 5. transfer characteristics figure 6. on - resistance vs. temperature r ds(on) , on - resistance (normalized) p d , power dissipation (w) v ds , drain - to - source voltage (v) v sd , source - to - drain voltage (v) i d , drain current (a) i d , drain current (a) i d , drain current (a) t c , case temperature (a) t c , case temperature ( o c) v gs , gate - to - source voltage (v) t j , junction temperature ( o c) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0 25 50 75 100 125 150 i s , source current (a) 10 1 10 0 10 -1 10 -2 0 5 10 15 20 25 30 35 0 20 40 60 80 100 0 4 8 12 16 20 0 2 4 6 8 10 12 14 16 18 20 20v 10v 8v 7v 6v 5v 0 2 4 6 8 10 12 14 0 2 4 6 8 10 t j = 150o c t j = 25o c a l l d a t a s h e e t . c o m
tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company 4 typical characteristics t j = 25 o c, unless otherwise noted figure 7. capacitance figure 8. gate charge v ds , drain - to - source voltage (v) q g , total gate charge ( nc ) capacitance (pf) v gs , gate - to - source voltage (v) 0 2 4 6 8 10 0 3 6 9 12 15 v dd = 120v v dd = 480v v dd = 400v 0 10 20 30 40 v gs = 0v f = 1mhz c iss c oss c rss 10 4 10 2 10 1 10 0 10 3 10 -3 10 -2 10 -1 10 0 10 1 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse z thjc , thermal impedance (k/w) t p , pulse width (s) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -1 10 -2 10 -3 10 1 d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse figure 10. transient thermal impedance to - 220, to - 251,to - 252 figure 9. transient thermal impedance to - 220f z thjc , thermal impedance (k/w) t p , pulse width (s) a l l d a t a s h e e t . c o m
tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company 5 figure a gate charge test circuit and waveform figure b resistive switching test circuit and waveform figure c unclamped inductive switching test circuit and waveform a l l d a t a s h e e t . c o m
tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company 6 to -220 a l l d a t a s h e e t . c o m
tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company 7 to -220f a l l d a t a s h e e t . c o m
tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company 8 to -252 a l l d a t a s h e e t . c o m
tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company 9 to -251 a l l d a t a s h e e t . c o m
tma4n65h,TMU4N65H,tmd4n65h, tmp4n65h www.tsinghuaicwx.com v3.0 wuxi unigroup microelectronics company wuxi unigroup microelectronics company 10 disclaimer all product specifications and data are subject to change without notice . for documents and material available from this datasheet, wuxi unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder . no license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of wuxi unigroup . the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications . customers using or selling wuxi unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify wuxi unigroup for any damages arising or resulting from such use or sale . wuxi unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law . the product specifications do not expand or otherwise modify wuxi unigroup?s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products . w uxi unigroup microelectronics co ., ltd . strives to supply high - quality high - reliability products . however, any and all semiconductor products fail with some probability . it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property . when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design . in the event that any or all wuxi unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law . information (including circuit diagrams and circuit parameters) herein is for example only . it is not guaranteed for volume production . wuxi unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties . a l l d a t a s h e e t . c o m
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